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APTC80SK15T1G
Buck chopper Super Junction MOSFET Power Module
5 6 Q1 7 8 CR2 3 4 NTC 11
VDSS = 800V RDSon = 150m max @ Tj = 25C ID = 28A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration
1
2
12
* * *
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 800 28 21 110 30 150 277 17 0.5 670 Unit V A V m W A mJ
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTC80SK15T1G - Rev 0
August, 2007
APTC80SK15T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V
3
Max 50 375 150 3.9 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 28A Inductive switching @125C VGS = 15V VBus = 533V ID = 28A RG = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5 Min Typ 4507 2092 108 180 22 90 10 13 83 35 486 278 850 342 J J nC Max Unit pF
ns
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Min 1200 Typ Max 100 500 30 2.6 3.2 1.8 300 380 360 1700 3.1 V ns nC Unit V A A
Tj = 125C Tj = 25C Tj = 125C
di/dt =200A/s
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2-6
APTC80SK15T1G - Rev 0
August, 2007
Tj = 125C Tj = 25C
APTC80SK15T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.45 1.2 150 125 100 4.7 80 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-6
APTC80SK15T1G - Rev 0
August, 2007
APTC80SK15T1G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.4 0.3 0.5 0.2 0.1 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.4 1.3 1.2 1.1 1 0.9 0.8 0 10 20 30 40 50 60 ID, Drain Current (A)
VGS=20V
Transfert Characteristics 100
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
VGS=15&10V
6V 5.5V 5V 4.5V 4V
ID, Drain Current (A)
6.5V
80 60 40 20 0 0
TJ=125C TJ=25C TJ=125C
1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 30 ID, DC Drain Current (A)
Normalized to VGS=10V @ 14A
VGS=10V
25 20 15 10 5 0 25 50 75 100 125 150
August, 2007 4-6 APTC80SK15T1G - Rev 0
TC, Case Temperature (C)
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APTC80SK15T1G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.0 0.9 0.8 0.7 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 1000 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 14A
100
limited by RDSon
100s
10
100ms 1ms
1
Single pulse TJ=150C TC=25C 1 10 100 1000 VDS, Drain to Source Voltage (V)
0
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200
August, 2007
VDS=640V ID=28A TJ=25C VDS=160V VDS=400V
10000
Ciss
1000
Coss
100
Crss
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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5-6
APTC80SK15T1G - Rev 0
APTC80SK15T1G
Delay Times vs Current Rise and Fall times vs Current 50 td(off) td(on) and td(off) (ns) 40 tr and tf (ns)
VDS=533V RG=2.5 TJ=125C L=100H
100 80 60 40 20 0 10 20 30 40 ID, Drain Current (A)
Switching Energy vs Current 1500 1200 900 600 300 0 10 20 30 40 ID, Drain Current (A) 50
VDS=533V RG=2.5 TJ=125C L=100H
tf
30 20 10 0
VDS=533V RG=2.5 TJ=125C L=100H
tr
td(on)
50
10
20 30 40 ID, Drain Current (A)
50
Switching Energy vs Gate Resistance 2500 Switching Energy (J)
VDS=533V ID=28A TJ=125C L=100H
Eon and Eoff (J)
Eon
2000 1500 1000 500 0 0
Eon Eon Eoff
Eoff
5 10 15 20 Gate Resistance (Ohms)
25
Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 6 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A)
Hard switching ZCS VDS=533V D=50% RG=2.5 TJ=125C TC=75C
ZVS
IDR, Reverse Drain Current (A)
400
Source to Drain Diode Forward Voltage 1000
100
TJ=150C
10
TJ=25C
1 0.2 0.6 1 1.4 1.8
August, 2007 APTC80SK15T1G - Rev 0
VSD, Source to Drain Voltage (V)
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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